Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy

Poster (Scientific congresses and symposiums)

Baert, Bruno; Truong, Dao Y Nhi; Nakatsuka, Osamu et al.

2012 • 6th International SiGe Technology and Device Meeting (ISTDM)

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https://hdl.handle.net/2268/115788

PID1125584.pdf

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Keywords :

GeSn; Electrical simulation; Impedance; Admittance

Disciplines :

Physics

Author, co-author :

Baert, Bruno ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Truong, Dao Y Nhi; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Nakatsuka, Osamu; Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science

Zaima, Shigeaki; Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Language :

English

Title :

Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy

Publication date :

2012

Event name :

6th International SiGe Technology and Device Meeting (ISTDM)

Event place :

Berkeley, United States - California

Event date :

4-6/06/2012

Audience :

International

Available on ORBi :

since 31 March 2012

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129 (26 by ULiège)

Number of downloads

5 (5 by ULiège)