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Baert Bruno

Département de physique > Physique des solides, interfaces et nanostructures

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Main Referenced Co-authors
Nguyen, Ngoc Duy  (16)
Gupta, Somya (7)
Simoen, Eddy (7)
Gencarelli, Federica (6)
Loo, Roger (6)
Main Referenced Keywords
GeSn (15); admittance spectroscopy (6); diodes (4); electrical characteristics (4); numerical simulation (4);
Main Referenced Disciplines
Physics (13)
Electrical & electronics engineering (4)

Publications (total 17)

The most downloaded
1042 downloads
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007 https://hdl.handle.net/2268/178856

The most cited

38 citations (Scopus®)

Wirths, S., Stange, D., Pampillon, M.-A., Tiedemann, A., Mussler, G., Fox, A., Breuer, U., Baert, B., San Andres, E., Nguyen, N. D., Hartmann, J.-M., Ikonic, Z., Mantl, S., & Buca, D. (2015). High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors. ACS Applied Materials and Interfaces, 7, 62-67. doi:10.1021/am5075248 https://hdl.handle.net/2268/196534

Baert, B. (2016). Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations [Doctoral thesis, ULiège - Université de Liège]. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/201505

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (September 2015). Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes [Poster presentation]. E-MRS 2015 Fall Meeting.

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007
Peer Reviewed verified by ORBi

Baert, B., Gupta, S., Gencarelli, F., Shimura, Y., Loo, R., Simoen, E., & Nguyen, N. D. (2015). Reverse current transient behavior of pGeSn/nGe diodes [Paper presentation]. The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montréal, Canada.

Wirths, S., Stange, D., Pampillon, M.-A., Tiedemann, A., Mussler, G., Fox, A., Breuer, U., Baert, B., San Andres, E., Nguyen, N. D., Hartmann, J.-M., Ikonic, Z., Mantl, S., & Buca, D. (2015). High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors. ACS Applied Materials and Interfaces, 7, 62-67. doi:10.1021/am5075248
Peer Reviewed verified by ORBi

Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium.

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (15 September 2014). Impact of traps on the electrical characteristics of GeSn/Ge diodes [Poster presentation]. E-MRS 2014 Fall Meeting - Symposium J, Warsaw, Poland.

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (03 June 2014). Electrical characterization of pGeSn/nGe diodes [Paper presentation]. 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore. doi:10.1109/ISTDM.2014.6874640

Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30. doi:10.1016/j.apsusc.2013.09.022
Peer Reviewed verified by ORBi

Gupta, S., Simoen, E., Asano, T., Nakatsuka, O., Gencarelli, F., Shimura, Y., Moussa, A., Loo, R., Zaima, S., Baert, B., Dobri, A., Nguyen, N. D., & Heyns, M. (04 June 2013). Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers [Paper presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan.

Baert, B., Gupta, S., Schmeits, M., Simoen, E., & Nguyen, N. D. (June 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Poster presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan.

Baert, B., Schmeits, M., & Nguyen, N. D. (May 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Paper presentation]. European Materials Research Society (E-MRS) 2013 Spring Meeting.

Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2013). Impedance Spectroscopy of GeSn-based Heterostructures. ECS Transactions, 50 (9), 481-490. doi:10.1149/05009.0481ecst
Peer reviewed

Baert, B., & Nguyen, N. D. (June 2012). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures [Poster presentation]. "Jaszowiec" International School and Conference on the Physics of Semiconductors.

Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. In 222nd ECS Meeting, 2012. ECS.
Peer reviewed

Baert, B., Truong, D. Y. N., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy [Poster presentation]. 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, United States - California.

Aazou, S., Ibral, A., Assaid, M., Baert, B., & Nguyen, N. D. (2011). New method for photovoltaic solar cell physical parameters extraction [Paper presentation]. Congrès International sur les Energies Renouvelables et l'Efficacité Energétique (CIEREE'2011), Fès, Morocco.

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