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Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
Baert, Bruno; Truong, Dao Y Nhi; Nakatsuka, Osamu et al.
2012 • 6th International SiGe Technology and Device Meeting (ISTDM)

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PID1125584.pdf

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