Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin

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Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy et al.

2011 • 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)

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Keywords :

SiGe; Heterojunction bipolar transistor; Emitter doping; Trisilane; Low-temperature epitaxy; Ge spike

Disciplines :

Physical, chemical, mathematical & earth Sciences: Multidisciplinary, general & others

Author, co-author :

You, Shuzhen; Imec

Decoutere, Stefaan; Imec

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Van Huylenbroeck, Stefaan; Imec

Sibaja-Hernandez, Arturo; Imec

Venegas, Rafael; Imec

Loo, Roger; Imec

De Meyer, Kristin; Katholieke Universiteit Leuven - KUL and Imec > ESAT

Language :

English

Title :

Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

Publication date :

2011

Event name :

7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)

Event organizer :

Imec, CEA/Leti, KUL, ULg

Event place :

Leuven, Belgium

Event date :

28/08/2011-01/09/2011

Audience :

International

Available on ORBi :

since 19 April 2011

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