Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology

Nguyen, Ngoc Duy; Rosseel, Erik; Takeuchi, Shotaro; Everaert, Jean-Luc; Loo, Roger; Goossens, Jozefien; Moussa, Alain; Clarysse, Trudo; Vandervorst, Wilfried

Paper published in a book (Scientific congresses and symposiums)

Nguyen, Ngoc Duy; Rosseel, Erik; Takeuchi, Shotaro et al.

2009 • In Chiussi, S.; Alpuim, P.; Murota, J. et al. (Eds.) SiNEP 2009. 1st International Workshop on Si based nano-electronics and -photonics

Peer reviewed

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https://hdl.handle.net/2268/69098

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Keywords :

Vapor phase doping; Laser anneal; Ultra shallow junction

Disciplines :

Electrical & electronics engineering

Author, co-author :

Nguyen, Ngoc Duy ; IMEC

Rosseel, Erik; IMEC

Takeuchi, Shotaro; IMEC

Everaert, Jean-Luc; IMEC

Loo, Roger; IMEC

Goossens, Jozefien; IMEC

Moussa, Alain; IMEC

Clarysse, Trudo; IMEC

Vandervorst, Wilfried; IMEC

Language :

English

Title :

Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology

Publication date :

2009

Event name :

1st International Workshop on Si-based Nano-electronics and –photonics

Event organizer :

University of Vigo

Event place :

Vigo, Spain

Event date :

20-23/9/2009

Audience :

International

Main work title :

SiNEP 2009. 1st International Workshop on Si based nano-electronics and -photonics

Editor :

Chiussi, S.

Alpuim, P.

Murota, J.

Gonzalez, P.

Serra, J.

Leon, B.

Publisher :

NETBIBLO

ISBN/EAN :

978-8497454162

Peer reviewed :

Peer reviewed

Available on ORBi :

since 13 August 2010

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