In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction

Hikavyy, A.; Nguyen, Ngoc Duy; Loo, R.; Ryan, P.; Wormington, M.; Hopkins, J.

Poster (Scientific congresses and symposiums)

Hikavyy, A.; Nguyen, Ngoc Duy; Loo, R. et al.

2008 • 4th International SiGe Technology and Device Meeting (ISTDM)

Permalink
https://hdl.handle.net/2268/68712

Files (1)Send to Details Statistics Bibliography Similar publications

Files

Full Text

Hikavyy_Nguyen_ISTDM_2008.pdf

Author postprint (173.23 kB)

Request a copy

All documents in ORBi are protected by a user license.

Send to

RIS BibTex APA Chicago Permalink X Linkedin

Details

Keywords :

In-line characterization; Heterojunction; Bipolar transistor; High-resolution X-ray diffraction

Disciplines :

Electrical & electronics engineering

Author, co-author :

Hikavyy, A.; IMEC

Nguyen, Ngoc Duy ; IMEC

Loo, R.; IMEC

Ryan, P.; Bede plc

Wormington, M.; Bede plc

Hopkins, J.; Bede plc

Language :

English

Title :

In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction

Publication date :

2008

Event name :

4th International SiGe Technology and Device Meeting (ISTDM)

Event organizer :

Nano Device Laboratories Taiwan

Event place :

Hsinchu, Taiwan

Event date :

11-14/5/2008

Audience :

International

Available on ORBi :

since 12 August 2010

Statistics

Number of views

88 (0 by ULiège)

Number of downloads

0 (0 by ULiège)

More statistics