[en] Ultralow substrate crosstalk is demonstrated using a novel metal Faraday cage isolation scheme in silicon-on-insulator technology. Over ten times reduction in crosstalk is demonstrated up to 10 GHz, compared to previously reported substrate crosstalk suppression technologies.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Stefanou, Stefanos
Hamel, John Stan
Baine, Paul
Bain, M.
Armstrong, B. Mervyn
Gamble, Harold S.
Kraft, Michaël ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés
Kemhadjian, H. A.
Language :
English
Title :
Ultralow silicon substrate noise crosstalk using metal Faraday cages in an SOI technology
Publication date :
2004
Journal title :
IEEE Transactions on Electron Devices
ISSN :
0018-9383
Publisher :
Institute of Electrical and Electronics Engineers, United States
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