Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow

C-doping; End-of-line; Original design; Phase stable; Physical-chemical analysis; Precoding; Thermal budget; Top layers; Electron devices; Lead; Phase change memory; Soldering; Flip chip devices

Abstract :

[en] In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented. © 2012 IEEE.

Disciplines :

Materials science & engineering

Author, co-author :

Perniola, L.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Noe, Pascal ; Université de Liège - ULiège > Architecture Site Lambert Lombard > Architecture Site Lambert Lombard

Hubert, Q.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Souiki, S.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Ghezzi, G.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Navarro, G.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Cabrini, A.; Dipartimento di Ingegneria Industriale e Dell-Informazione, France

Persico, A.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Delaye, V.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Blachier, D.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

More authors (16 more)

Language :

English

Title :

Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow

Publication date :

2012

Event name :

2012 IEEE International Electron Devices Meeting, IEDM 2012

Event date :

10 December 2012 through 13 December 2012

Audience :

International

Journal title :

Technical Digest - International Electron Devices Meeting, IEDM

ISSN :

0163-1918

Pages :

18.7.1-18.7.4

Peer reviewed :

Peer reviewed

Funders :

IEEE Electron Devices Society

Commentary :

96525 9781467348706

Available on ORBi :

since 11 March 2014

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Bibliography

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