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Noe Pascal

Département d'Architecture

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Main Referenced Co-authors
De Salvo, B. (2)
Fillot, F. (2)
Ghezzi, G. (2)
Hippert, F. (2)
Jahan, C. (2)
Maitrejean, S. (2)
Main Referenced Keywords
Amorphous phase (1); C-doping (1); Electron devices (1); End-of-line (1); Flip chip devices (1);
Main Referenced Disciplines
Materials science & engineering (2)

Publications (total 2)

The most downloaded
7 downloads
Maitrejean, S., Ghezzi, G., Gourvest, E., Beneventi, G. B., Fantini, A., Pashkov, N., Navarro, G., Roule, A., Fillot, F., Noe, P., Lhostis, S., Cueto, O., Jahan, C., Nodin, J. F., Persico, A., Armand, M., Dussault, L., Vallé, C., Michallon, P., ... De Salvo, B. (2012). Phase Change Memories challenges: A material and process perspective. IEEE International Interconnect Technology Conference. doi:10.1109/IITC.2012.6251591 https://hdl.handle.net/2268/164097

The most cited

15 citations (Scopus®)

Perniola, L., Noe, P., Hubert, Q., Souiki, S., Ghezzi, G., Navarro, G., Cabrini, A., Persico, A., Delaye, V., Blachier, D., Barnes, J.-P., Henaff, E., Tessaire, M., Souchier, E., Roule, A., Fillot, F., Ferrand, J., Fargeix, A., Hippert, F., ... Reimbold, G. (2012). Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow. Technical Digest - International Electron Devices Meeting, IEDM, 18.7.1-18.7.4. doi:10.1109/IEDM.2012.6479069 https://hdl.handle.net/2268/164096

Maitrejean, S., Ghezzi, G., Gourvest, E., Beneventi, G. B., Fantini, A., Pashkov, N., Navarro, G., Roule, A., Fillot, F., Noe, P., Lhostis, S., Cueto, O., Jahan, C., Nodin, J. F., Persico, A., Armand, M., Dussault, L., Vallé, C., Michallon, P., ... De Salvo, B. (2012). Phase Change Memories challenges: A material and process perspective. IEEE International Interconnect Technology Conference. doi:10.1109/IITC.2012.6251591
Peer reviewed

Perniola, L., Noe, P., Hubert, Q., Souiki, S., Ghezzi, G., Navarro, G., Cabrini, A., Persico, A., Delaye, V., Blachier, D., Barnes, J.-P., Henaff, E., Tessaire, M., Souchier, E., Roule, A., Fillot, F., Ferrand, J., Fargeix, A., Hippert, F., ... Reimbold, G. (2012). Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow. Technical Digest - International Electron Devices Meeting, IEDM, 18.7.1-18.7.4. doi:10.1109/IEDM.2012.6479069
Peer reviewed

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