Article (Scientific journals)
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Waldron, Niamh; Nguyen, Ngoc Duy; Lin, Dennis et al.
2011In ECS Transactions, 35, p. 299
Peer reviewed
 

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Keywords :
CMOS; III-V; Device integration
Abstract :
[en] We report on the fabrication of MOS capacitors on 200 mm virtual GaAs substrates using a Si CMOS processing environment. The fabricated capacitors were comparable to those processed on bulk GaAs material. Topside contact was made to the GaAs using a novel CMOS compatible self-aligned NiGe contact scheme resulting in a measured contact resistance of 0.26 [ohm sign].cm. Cross-contamination from various III-V substrates was investigated and it was found that by limiting the thermal budget to <= 300C cross-contamination from the outgassing of In, Ga and As could be eliminated. For wet processing the judicious choice of recipe and processing conditions resulted in no significant cross-contamination being detected as determined by TXRF monitoring. This achievement enables III-V device production using state-of-the-art Si processing equipment.
Disciplines :
Physics
Author, co-author :
Waldron, Niamh;  IMEC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Lin, Dennis;  IMEC
Brammertz, Guy;  IMEC
Vincent, Benjamin;  IMEC
Firrincieli, Andrea;  IMEC
Windericks, Gillis;  IMEC
Sioncke, Sonja;  IMEC
De Jaeger, Brice;  IMEC
Mitard, Jerome;  IMEC
Wang, Wei-E;  IMEC
Heyns, Marc;  IMEC
Caymax, Matty;  IMEC
Meuris, Marc;  IMEC
Hoffmann, Thomas;  IMEC
More authors (6 more) Less
Language :
English
Title :
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Publication date :
2011
Journal title :
ECS Transactions
ISSN :
1938-5862
eISSN :
1938-6737
Publisher :
The Electrochemical Society, Pennington, United States - New Jersey
Volume :
35
Pages :
299
Peer reviewed :
Peer reviewed
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