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Poster (Scientific congresses and symposiums)
Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices
Shimizu, Yasuo
;
Nguyen, Ngoc Duy
;
Jiang, Sijia
et al.
2010
•
5th International Workshop on New Group IV Semiconductor Nanoelectronics
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https://hdl.handle.net/2268/69195
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Keywords :
Vapor phase doping; Ultra shallow junction; CMOS
Disciplines :
Electrical & electronics engineering
Author, co-author :
Shimizu, Yasuo;
Katholieke Universiteit Leuven - KUL, Keio University and IMEC > (KUL) Department of Metallurgy and Materials Engineering and (Keio) Department of Applied Physics and Physico-Informatics
Nguyen, Ngoc Duy
;
IMEC
Jiang, Sijia;
IMEC
Rosseel, Erik;
IMEC
Takeuchi, Shotaro;
University of Nagoya > Department of Crystalline Materials Science
Everaert, Jean-Luc;
IMEC
Loo, Roger;
IMEC
Vandervorst, Wilfried;
Katholieke Universiteit Leuven - KUL and IMEC > Department of Physics - IKS
Caymax, Matty;
IMEC
Language :
English
Title :
Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices
Publication date :
2010
Event name :
5th International Workshop on New Group IV Semiconductor Nanoelectronics
Event organizer :
Tohoku University
Event place :
Sendai, Japan
Event date :
29-30/1/2010
Audience :
International
Available on ORBi :
since 16 August 2010
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