Growth of III/V materials on large area silicon

Continuous miniaturization has been at the heart of advances in modern semiconductor electronics. However, further scalability has seen its limits for conventional CMOS technology due to short channel effects. To further increase the performance for the 32 and 22 nm nodes, channel engineering introducing III-V materials may be necessary. Hence, epitaxial growth and processing strategies have to be developed which combine the high complexity of an MOCVD growth chamber with the requirements of the silicon industry.