200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD

Park, Si-Young; Anisha, Ramesh; Berger, Paul; Loo, Roger; Nguyen, Ngoc Duy; Takeuchi, Shotaro; Caymax, Matty

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200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD

Park, Si-Young; Anisha, Ramesh; Berger, Paul et al.

2009 • 6th International Conference on Silicon Epitaxy and Heterostructures

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Keywords :

Resonant Interband Tunneling Diode; Delta-doping; SiGe; CVD

Disciplines :

Electrical & electronics engineering

Author, co-author :

Park, Si-Young; Ohio State University > Department of Electrical and Computer Engineering

Anisha, Ramesh; Ohio State University > Department of Electrical and Computer Engineering

Berger, Paul; Ohio State University > Department of Electrical and Computer Engineering and the Department of Physics

Loo, Roger; IMEC

Nguyen, Ngoc Duy ; IMEC

Takeuchi, Shotaro; IMEC

Caymax, Matty; IMEC

Language :

English

Title :

200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD

Publication date :

2009

Event name :

6th International Conference on Silicon Epitaxy and Heterostructures

Event organizer :

UCLA, ASM

Event place :

Los Angeles, United States

Event date :

17-22/5/2009

Audience :

International

Available on ORBi :

since 13 August 2010

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