Article (Scientific journals)
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Reiche, M.; Moutanabbir, O.; Himcinschi, C. et al.
2008In ECS Transactions, 16, p. 211
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Keywords :
Strained silicon; Wafer bonding; Strain relaxation; Strain measurement
Abstract :
[en] Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain is introduced in CMOS devices by process-induced stressors allowing the local generation of tensile or compressive strain in the channel region of MOSFETs. Biaxial strain is introduced by growing thin silicon layer on SiGe buffer and transferring it to an oxidized silicon substrates. The latter forms strained silicon on insulator (SSOI) wafer characterized by tensile strain only. Future CMOS device technologies require the combination of the global strain of SSOI substrates with local stressors to increase the device performance.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Reiche, M.;  Max Planck Institut of Microstructure Physics
Moutanabbir, O.;  Max Planck Institut of Microstructure Physics
Himcinschi, C.;  Max Planck Institut of Microstructure Physics
Christiansen, S.;  Max Planck Institut of Microstructure Physics
Erfurth, E.;  Max Planck Institut of Microstructure Physics
Gösele, U.;  Max Planck Institut of Microstructure Physics
Mantl, S.;  Research Center Jülich > Institute of Bio- and Nanosystems
Buca, D.;  Research Center Jülich > Institute of Bio- and Nanosystems
Zhao, Q.;  Research Center Jülich > Institute of Bio- and Nanosystems
Loo, R.;  IMEC
Muster, F.;  Fraunhofer Institute for Mechanics of Materials
Petzold, M.;  Fraunhofer Institute for Mechanics of Materials
More authors (3 more) Less
Language :
English
Title :
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Publication date :
2008
Journal title :
ECS Transactions
ISSN :
1938-5862
eISSN :
1938-6737
Publisher :
ECS, Pennington, United States
Volume :
16
Pages :
211
Peer reviewed :
Peer reviewed
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