Conformational Domain Wall Switch

Electric fields; Ferroelectric materials; Ferroelectricity; Nanoelectronics; Scanning probe microscopy; Atomistic simulations; Conformational change; Conformational control; Ferroelectric domains; Head-to-head domain walls; Kelvin probe microscopy; Multiferroics; Piezoresponse force microscopy; Domain walls

Abstract :

[en] Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Disciplines :

Physics

Author, co-author :

Sharma, P.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Sando, D.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Zhang, Q.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Cheng, X.; Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, United States

Prosandeev, S.; Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States

Bulanadi, R.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Prokhorenko, Sergei ; Université de Liège - ULiège > Département de physique > Physique théorique des matériaux

Bellaiche, L.; Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States

Chen, L.-Q.; Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, United States

Nagarajan, V.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Seidel, J.; School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

Language :

English

Title :

Conformational Domain Wall Switch

Publication date :

2019

Journal title :

Advanced Functional Materials

ISSN :

1616-301X

eISSN :

1616-3028

Publisher :

John Wiley & Sons, United Kingdom

Volume :

Pages :

1807523

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 15 May 2021

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