Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Pourakbar, M.; Redouté, Jean-Michel; Faulkner, M.

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Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Pourakbar, M.; Redouté, Jean-Michel; Faulkner, M.

2011 • In Asia-Pacific Microwave Conference Proceedings, APMC, p. 299-302

Peer reviewed

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https://hdl.handle.net/2268/237898

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Keywords :

Integrated circuit design; High-power; Integrated circuit designs; Radio frequencies; Silicon-on-sapphire; Switched capacitor; Capacitors; High electron mobility transistors; Sapphire; Switches; MESFET devices

Abstract :

[en] The RF circuitry in new generation mobile handsets is continuously becoming smaller while containing more functionality. Silicon-on-sapphire (SOS) technology is an advanced active device process that eases the fabrication of advanced wireless components on very high resistivity substrates. This paper presents the basic theory and resulting trade-offs regarding RF FET switches in order to achieve a high power handling capability, low insertion loss and high linearity of the latter. A combined RF switch consisting of eight stacked FETs, used in a high power switched capacitor banks, is designed with an insertion loss of 1 dB at 2 GHz for a transmitter power of 39.5 dBm. The presented configuration has a high linearity featuring P 1dB and IIP3 of 49.2 dBm and 54.3 dBm, respectively. © 2011 Engineers Australia.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Pourakbar, M.; Centre for Telecommunications and Micro-Electronics (CTME), Victoria University, PO Box 14428 MCM, Melbourne, VIC 8001, Australia

Redouté, Jean-Michel ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Faulkner, M.; Centre for Telecommunications and Micro-Electronics (CTME), Victoria University, PO Box 14428 MCM, Melbourne, VIC 8001, Australia

Language :

English

Title :

Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Publication date :

2011

Event name :

Asia-Pacific Microwave Conference, APMC 2011

Event date :

5 December 2011 through 8 December 2011

Audience :

International

Journal title :

Asia-Pacific Microwave Conference Proceedings, APMC

Pages :

299-302

Peer reviewed :

Peer reviewed

Funders :

CST

Commentary :

89558 9780858259744

Available on ORBi :

since 02 July 2019

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