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Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Pourakbar, M.; Redouté, Jean-Michel; Faulkner, M.

2011 • In Asia-Pacific Microwave Conference Proceedings, APMC, p. 299-302

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2011 - Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process.pdf

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2011 - Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process.pdf

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