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A cmos source-buffered differential input stage with high EMI suppression
Redouté, Jean-Michel; Steyaert, M.
2008In European Solid-State Circuits Conference Proceedings, ESSCIRC, p. 318-321
Peer reviewed
 

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Keywords :
Electromagnetic compatibility; Differential inputs; Differential pairs; Electromagnetic interferences; Emi suppressions; Input pins; Offset voltages; Electromagnetic pulse
Abstract :
[en] This paper introduces a CMOS source-buffered differential input stage exhibiting a high degree of immunity against electromagnetic interferences (EMI) which are applied on its input pins. The measurements of a test-IC illustrate that the source-buffered differential pair generates a maximal EMI induced input offset voltage of 116 mV when a 750 mV RMS EMI signal is injected in its inputs, while a classic differential pair output is saturated with a maximal offset of 610 mV under the same circumstances. © 2008 IEEE.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Redouté, Jean-Michel  ;  Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés
Steyaert, M.;  Dept. ESAT - MICAS Katholieke, Universiteit Leuven, Heverlee, Belgium
Language :
English
Title :
A cmos source-buffered differential input stage with high EMI suppression
Publication date :
2008
Event name :
34th European Solid-State Circuits Conference, ESSCIRC 2008
Event date :
15 September 2008 through 19 September 2008
Audience :
International
Journal title :
European Solid-State Circuits Conference Proceedings, ESSCIRC
Pages :
318-321
Peer reviewed :
Peer reviewed
Funders :
CSR
Commentary :
74847 9781424423620
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