Modeling and design of EMI-immune OpAmps in 0.18-μm CMOS Technology

CMOS; Circuit simulation; CMOS integrated circuits; Electromagnetic pulse; Frequency response; Integrated circuit design; CMOS operational amplifiers; CMOS technology; Miller operational amplifiers; Offset voltage; Operating condition; Operational amplifiers

Abstract :

[en] This paper explores the modeling and design of Miller-based operational amplifier structures that are highly immune to electromagnetic interference (EMI). The proposed CMOS Miller-based operational amplifier is derived using the present modeling. It provides higher immunity to EMI that is injected into the amplifier's input over a wide range of frequencies; moreover, the frequency response is comparable to that of a Miller operational amplifier. Simulation results show that the maximum EMI-induced input offset voltage for the proposed CMOS operational amplifier is 5 mV at an EMI frequency of 40 MHz, when a 900 mVpp EMI signal is applied at its input. In contrast, the standard Miller operational amplifier generates an input offset voltage of 32 mV under the same operating conditions. The developed mathematical modeling of the EMI-induced offset correlates with the circuit simulations, providing superior accuracy when designing for high EMI robustness. © 1964-2012 IEEE.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Boyapati, S.; IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India

Redouté, Jean-Michel ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Baghini, M. S.; Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India

Language :

English

Title :

Modeling and design of EMI-immune OpAmps in 0.18-μm CMOS Technology

Publication date :

2016

Journal title :

IEEE Transactions on Electromagnetic Compatibility

ISSN :

0018-9375

eISSN :

1558-187X

Publisher :

Institute of Electrical and Electronics Engineers Inc.

Volume :

Issue :

Pages :

1609-1616

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 14 September 2018

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