EMI resisting CMOS differential pair structure

Differential pair structure; Input signal; Offset voltage; Superimposed; Electric potential; Signal interference; Signal processing; CMOS integrated circuits

Abstract :

[en] An improved differential pair structure, which is highly immune to conducted electromagnetic interference (EMI), is described. This new structure has a very low input offset voltage, even when a large EMI is superimposed on the nominal input signal. © The Institution of Engineering and Technology 2006.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Redouté, Jean-Michel ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Steyaert, M.; Departement Elektrotechniek, Afdeling ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven-Heverlee, Belgium

Language :

English

Title :

EMI resisting CMOS differential pair structure

Publication date :

2006

Journal title :

Electronics Letters

ISSN :

0013-5194

eISSN :

1350-911X

Publisher :

Institute of Electrical Engineers, United Kingdom

Volume :

Issue :

Pages :

1217-1218

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 06 September 2018

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Bibliography

Fiori, F.: ' On the susceptibility of analog circuits to EMI ', Advances in Analog circuit design, Maastricht, The Netherlands, 2006, April)
Fiori, F., and Crovetti, P.S.: ' Nonlinear effects of radio-frequency interference in operational amplifiers ', IEEE Trans. Circuits Syst. I, 2002, 49, (3), p. 367-372 10.1109/81.989173 1057-7122
Fiori, F.: ' Operational amplifier input stage robust to EMI ', Electron. Lett., 2001, 37, (15), p. 930-931 10.1049/el:20010651 0013-5194