Morphological investigation of indium and gallium co-doped ZnO films, derived by sol-gel method

Ivanova, T.; Harizanova, A.; Koutzarova, T.; Vertruyen, Bénédicte

doi:10.1109/ISSE.2017.8000966

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Morphological investigation of indium and gallium co-doped ZnO films, derived by sol-gel method

Ivanova, T.; Harizanova, A.; Koutzarova, T. et al.

2017 • In Proceedings of the International Spring Seminar on Electronics Technology

Peer reviewed

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https://hdl.handle.net/2268/226519

DOI
10.1109/ISSE.2017.8000966

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Keywords :

Energy gap; Gallium; Indium alloys; Metallic films; Optical films; Sol-gel process; Sol-gels; Ternary alloys; Thallium alloys; Zinc; Zinc alloys; Zinc oxide; Co-doped ZnO; Co-doping; Crystallinities; Optical study; Sol-gel approach; XRD analysis; Oxide films

Abstract :

[en] Ga-and In co-doped ZnO films have been successfully obtained by sol-gel approach. XRD analysis shows that Zn-In-Ga oxide films possess lower crystallinity compared with the undoped ZnO and ZnO:In films. The corresponding XRD lines are broader and less intense. FTIR detailed study of Zn-In-Ga oxides and ZnO shows that Ga and In codoping affects the shapes and the intensity of the absorption bands with no traces of Ga-O and In-O bonds. Optical study shows that the Zn-In-Ga oxide films have improved transparency compared to ZnO and ZnO:In films. The optical band gaps are estimated and discussed. © 2017 IEEE.

Disciplines :

Chemistry
Materials science & engineering
Physics

Author, co-author :

Ivanova, T.; Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Harizanova, A.; Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Koutzarova, T.; Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko chaussee 72, Sofia, Bulgaria

Vertruyen, Bénédicte ; Université de Liège - ULiège > Département de chimie (sciences) > Chimie inorganique structurale

Language :

English

Title :

Morphological investigation of indium and gallium co-doped ZnO films, derived by sol-gel method

Publication date :

2017

Event name :

40th International Spring Seminar on Electronics Technology, ISSE 2017

Event date :

10 May 2017 through 14 May 2017

Audience :

International

Journal title :

Proceedings of the International Spring Seminar on Electronics Technology

ISSN :

2161-2528

Publisher :

IEEE Computer Society

Peer reviewed :

Peer reviewed

Available on ORBi :

since 12 July 2018

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