[en] We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nm Al2O3 / 4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance− voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
Disciplines :
Physics
Author, co-author :
Wirths, Stephan; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Stange, Daniela; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Pampillon, Maria-Angela; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Tiedemann, Andreas; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Mussler, Gregor; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Fox, Alfred; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Breuer, Uwe; Forschungszentrum Jülich > Central Institute for Engineering, Electronics and Analytics
Baert, Bruno ; Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures
San Andres, Enrique; Universidad Complutense de Madrid > Departamento Física Aplicada III : Electricidad y Electrońica
Nguyen, Ngoc Duy ; Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures
Hartmann, Jean-Michel; Commissariat à l'Energie Atomique (Saclay) - CEA > LETI
Ikonic, Zoran; University of Leeds > Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering
Mantl, Siegfried; Forschungszentrum Jülich > PGI 9 and JARA-FIT
Buca, Dan; Forschungszentrum Jülich > PGI 9 and JARA-FIT
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