Reference : High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effec...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/196534
High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
English
Wirths, Stephan [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Stange, Daniela [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Pampillon, Maria-Angela [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Tiedemann, Andreas [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Mussler, Gregor [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Fox, Alfred [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Breuer, Uwe [Forschungszentrum Jülich > Central Institute for Engineering, Electronics and Analytics > > >]
Baert, Bruno [Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures >]
San Andres, Enrique [Universidad Complutense de Madrid > Departamento Física Aplicada III : Electricidad y Electrońica > > >]
Nguyen, Ngoc Duy mailto [Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures >]
Hartmann, Jean-Michel [Commissariat à l'Energie Atomique (Saclay) - CEA > LETI > > >]
Ikonic, Zoran [University of Leeds > Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering > > >]
Mantl, Siegfried [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
Buca, Dan [Forschungszentrum Jülich > PGI 9 and JARA-FIT > > >]
2015
ACS Applied Materials and Interfaces
American Chemical Society
7
62-67
Yes
International
1944-8244
1944-8252
D.C.
[en] strained Ge ; GeSn ; high-k dielectrics ; low bandgap alloys ; field-effect transistor
[en] We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nm Al2O3 / 4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance− voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
Researchers
http://hdl.handle.net/2268/196534
10.1021/am5075248

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