Article (Scientific journals)
High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
Wirths, Stephan; Stange, Daniela; Pampillon, Maria-Angela et al.
2015In ACS Applied Materials and Interfaces, 7, p. 62-67
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Keywords :
strained Ge; GeSn; high-k dielectrics; low bandgap alloys; field-effect transistor
Abstract :
[en] We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nm Al2O3 / 4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance− voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
Disciplines :
Physics
Author, co-author :
Wirths, Stephan;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Stange, Daniela;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Pampillon, Maria-Angela;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Tiedemann, Andreas;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Mussler, Gregor;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Fox, Alfred;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Breuer, Uwe;  Forschungszentrum Jülich > Central Institute for Engineering, Electronics and Analytics
Baert, Bruno ;  Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures
San Andres, Enrique;  Universidad Complutense de Madrid > Departamento Física Aplicada III : Electricidad y Electrońica
Nguyen, Ngoc Duy  ;  Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures
Hartmann, Jean-Michel;  Commissariat à l'Energie Atomique (Saclay) - CEA > LETI
Ikonic, Zoran;  University of Leeds > Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering
Mantl, Siegfried;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
Buca, Dan;  Forschungszentrum Jülich > PGI 9 and JARA-FIT
More authors (4 more) Less
Language :
English
Title :
High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
Publication date :
2015
Journal title :
ACS Applied Materials and Interfaces
ISSN :
1944-8244
eISSN :
1944-8252
Publisher :
American Chemical Society, United States - District of Columbia
Volume :
7
Pages :
62-67
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 08 May 2016

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