[en] Wafer bonding has been identified as a promising technique to enable fabrication of many advanced semiconductor devices such as three-dimensional integrated circuits (3D IC) and micro /nano systems. However, with the device dimensions already in the nanometre range, the
lack of approaches to achieve high precision bonding alignment has restricted many applications. With this increasing demand for wafer bonding applications, a novel mechanical passive alignment technique is described in this work aiming at nanoprecision alignment based on kinematic and elastic averaging effects. A number of cantilever-supported pyramid and V-pit
microstructures have been incorporated into the outer circumference area of the to-be-bonded Si chips, respectively. The engagement between the convex pyramids and concave V-pits and the compliance of the support cantilever flexures result in micromechanical passive alignment which is followed by direct bonding between the Si chips. The subsequent infrared
(IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the achievement of alignment accuracy of better than 200 nm at the bonding interface with good bonding quality. The impact and potential applications of the developed alignment technique are also discussed.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Jiang, Liudi
Pandraud, Gregory
French, Paddy James
Spearing, S. Mark
Kraft, Michaël ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés
Language :
English
Title :
A novel method for nanoprecision alignment in wafer bonding applications
scite shows how a scientific paper has been cited by providing the context of the citation, a classification describing whether it supports, mentions, or contrasts the cited claim, and a label indicating in which section the citation was made.
Bibliography
Lasky J B 1986 Wafer bonding for silicon-on-insulator technologies Appl. Phys. Lett. 48 78-80
Shimbo M, Furukawa K, Fukuda F and Tanzawa K 1986 Silicon-to-silicon direct bonding method J. Appl. Phys. 60 2987-9
Miki N, Zhang X, Khanna R, Ayón A A, Ward D and Spearing S M 2003 Multi-stack silicon-direct wafer bonding for 3D MEMS manufacturing Sensors Actuators A 103 194-201
Lu J Q et al 2002 A wafer-scale 3D IC technology platform using dielectric bonding glues and copper damascene patterned inter-wafer interconnects Proc. IEEE 2002 Int. Interconnect Technology Conf. pp 78-80
Topol A W, Furman B K, Guarini K W, Shi L, Cohen G M and Walker G F 2004 Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures IEEE Proc. 54th Electronic Components and Technology Conf. pp 931-8
Peizer R, Mafthias T, Kettner P, Lindner P and Schaefer C 2003 Vertical 3D interconnect through aligned wafer bonding Proc. 5th Int. Conf. on Electronic Packaging Technology vol 5 pp 512-7
Gui C, Veldhuis G J, Koster T M, Lambeck P V, Berenschot J W, Gardeniers J G E and Elwenspoek M 1999 Fabrication of nanomechanical optical devices with aligned wafer bonding Microsyst. Technol. 5 138-43
Mirza A R 2000 One micron precision, wafer-level aligned bonding for interconnect, MEMS and packaging applications IEEE Proc. 50th Electronic Components & Technology Conf. pp 676-80
Slocum A H and Weber A C 2003 Precision passive mechanical alignment of wafers IEEE J. Microelectromech. Syst. 12 826-34
Seidel H, Csepregi L, Heuberger A and Baumgärtel H 1990 Anisotropic etching of crystalline silicon in alkaline solutions: I. Orientation dependence and behavior of passivation layers J. Electrochem. Soc. 137 3612-26
Reddy P S and Jessing J R 2004 Pattern alignment effects in through-wafer bulk micromachining of (1 0 0) silicon Proc. 2004 IEEE Workshop on Microelectronics and Electron Devices pp 89-92
Zhang Q, Liu L and Li Z 1996 A new approach to convex corner compensation for anisotropic etching of (1 0 0) Si in KOH Sensors Actuators A 56 251-4
Godin M, Tabard-Cossa V, Grutter P and Williams P 2001 Quantitative surface stress measurements using a microcantilever Appl. Phys. Lett. 79 551-3
Stoney G 1909 The tension of metallic films deposited by electrolysis Proc. R. Soc. A 82 172-5
Laermer F, Schilp A, Funk K and Offenberg M 1999 Bosch deep silicon etching: improving uniformity and etch rate for advanced MEMS applications IEEE Proc. 12th Int. Conf. on Micro Electro Mechanical Systems pp 211-6
Niklaus F, Enoksson P, Kälvesten E and Stemme G 2003 A method to maintain wafer alignment precision during adhesive wafer bonding Sensors Actuators A 107 273-8
Shakespeare W J 2005 MEMS integrated submount alignment for optoelectronics J. Lightwave Technol. 23 504-9
Similar publications
Sorry the service is unavailable at the moment. Please try again later.
This website uses cookies to improve user experience. Read more
Save & Close
Accept all
Decline all
Show detailsHide details
Cookie declaration
About cookies
Strictly necessary
Performance
Strictly necessary cookies allow core website functionality such as user login and account management. The website cannot be used properly without strictly necessary cookies.
This cookie is used by Cookie-Script.com service to remember visitor cookie consent preferences. It is necessary for Cookie-Script.com cookie banner to work properly.
Performance cookies are used to see how visitors use the website, eg. analytics cookies. Those cookies cannot be used to directly identify a certain visitor.
Used to store the attribution information, the referrer initially used to visit the website
Cookies are small text files that are placed on your computer by websites that you visit. Websites use cookies to help users navigate efficiently and perform certain functions. Cookies that are required for the website to operate properly are allowed to be set without your permission. All other cookies need to be approved before they can be set in the browser.
You can change your consent to cookie usage at any time on our Privacy Policy page.