Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes

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Poster (Scientific congresses and symposiums)

Baert, Bruno; Gupta, Somya; Gencarelli, Federica et al.

2015 • E-MRS 2015 Fall Meeting

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https://hdl.handle.net/2268/187525

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Keywords :

GeSn; diodes; electrical characteristics; I-V characteristics; admittance spectroscopy; passivation

Disciplines :

Physics

Author, co-author :

Baert, Bruno ; Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures

Gupta, Somya; Katholieke Universiteit Leuven - KUL

Gencarelli, Federica; Katholieke Universiteit Leuven - KUL

Loo, Roger; IMEC

Simoen, Eddy; IMEC

Nguyen, Ngoc Duy ; Université de Liège > Département de physique > Physique des solides, interfaces et nanostructures

Language :

English

Title :

Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes

Publication date :

September 2015

Event name :

E-MRS 2015 Fall Meeting

Event date :

du 15 au 18 septembre 2015

Audience :

International

Available on ORBi :

since 02 November 2015

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