Phase Change Memories challenges: A material and process perspective

Maitrejean, S.; Ghezzi, G.; Gourvest, E.; Beneventi, G. B.; Fantini, A.; Pashkov, N.; Navarro, G.; Roule, A.; Fillot, F.; Noe, Pascal; Lhostis, S.; Cueto, O.; Jahan, C.; Nodin, J. F.; Persico, A.; Armand, M.; Dussault, L.; Vallé, C.; Michallon, P.; Morel, R.; Brenac, A.; Audier, M.; Raty, Jean-Yves; Hippert, F.; Perniola, L.; Sousa, V.; De Salvo, B.

doi:10.1109/IITC.2012.6251591

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Phase Change Memories challenges: A material and process perspective

Maitrejean, S.; Ghezzi, G.; Gourvest, E. et al.

2012 • In IEEE International Interconnect Technology Conference

Peer reviewed

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https://hdl.handle.net/2268/164097

DOI
10.1109/IITC.2012.6251591

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Keywords :

Amorphous phase; Materials and process; Phase change materials

Abstract :

[en] Among all the new memories concepts, Phase Change Memories (PCM) is one of the most promising. However, various challenges remain. This paper reviews the materials and processes required to face these challenges. As an example, attention will be made on the effect of Phase change material composition on stability of the amorphous phase i.e. on the retention of the information. Additionally, it is showed how specific processes such as CVD or ALD can be developed in order to minimize the current required to amorphize the phase change material i.e. to reset the device. Finally, with the perspectives of the advanced integration nodes, experimental results on the effect of scaling on phase transformation are presented and discussed. © 2012 IEEE.

Disciplines :

Materials science & engineering

Author, co-author :

Maitrejean, S.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Ghezzi, G.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France, Laboratoire des Matériaux et du Génie Physique (Grenoble-INP, CNRS), Minatec, 3 Parvis L. Neel, 38016 Grenoble, France

Gourvest, E.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France, LTM-Leti, Minatec Campus, F38054 Grenoble, France, STMicroelectronics, 38926 Crolles, France

Beneventi, G. B.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Fantini, A.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Pashkov, N.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Navarro, G.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Roule, A.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Fillot, F.; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

Noe, Pascal ; Université de Liège - ULiège > Architecture Site Lambert Lombard > Architecture Site Lambert Lombard

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Language :

English

Title :

Phase Change Memories challenges: A material and process perspective

Publication date :

2012

Event name :

2012 IEEE International Interconnect Technology Conference, IITC 2012

Event date :

4 June 2012 through 6 June 2012

Audience :

International

Journal title :

IEEE International Interconnect Technology Conference

Peer reviewed :

Peer reviewed

Name of the research project :

PERCEVALL project; MaxCaps project (2T210 - European Medea+ framework); Refined project (CT205 - European Medea+ framework)

Funders :

Nanoscience foundation

Available on ORBi :

since 11 March 2014

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Bibliography

R. Bez and A. Pirovano, "Non-volatile memory technologies: emerging concepts and new materials," Materials Science in Semiconductor Processing, vol. 7, pp. 349-355, 2004.
G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, and R. S. Shenoy, "Overview of candidate device technologies for storage-class memory," IBM Journal of Research and Development, vol. 52, pp. 449-464, Jul-Sep 2008.
H. Goronkin and Y. Yang, "High-performance emerging solid-state memory technologies," MRS Bul., vol. 29, pp. 805-808, Nov 2004.
G. W. Burr, M. J. Breitwisch, M. Franceschini et al., "Phase change memory technology," Journal of Vacuum Science & Technology B, vol. 28, pp. 223-262, Mar 2010.
L. Perniola, V. Sousa, A. Fantini et al. "Electrical Behavior of Phase-Change Memory Cells Based on GeTe," IEEE Electron Device Letters, vol. 31, pp. 488-490, 2010.
G. Navarro, N. Pashkov, M. Suri et al. "Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories," in 2011 3rd IEEE International Memory Workshop (IMW), 2011, pp. 1-4.
E. Gourvest, S. Lhostis, J. Kreisel et al. "Evidence of Germanium precipitation in phase-change Ge1- xTex thin films by Raman scattering," Applied Physics Letters, vol. 95, pp. 031908-3, 2009.
N. Pashkov, G. Navarro, J. C. Bastien et al. "Physical and electrical characterization of Germanium or Tellurium rich GeTe for phase change memories," in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011, pp. 91-94.
H. Y. Cheng, T. H. Hsu, S. Raoux et al. "A high performance phase change memory with fast switching speed and high temperature retention by engineering the GeSbTe phase change material," presented at the 2011 IEEE International Electron Devices Meeting (IEDM), 2011.
A. Fantini, V. Sousa, L. Perniola et al. "N-doped GeTe as performance booster for embedded Phase-Change Memories," In 2010 IEEE International Electron Devices Meeting (IEDM), 2010.
G. Betti Beneventi, L. Perniola, V. Sousa et al. "Carbon-doped GeTe: A promising material for Phase-Change Memories," Solid-State Electronics, vol. 65-66, pp. 197-204, 2011.
T. Morikawa, T. Morikawa, K. Kurotsuchi et al., "Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention," presented at the IEEE International Electron Devices Meeting, 2007. IEDM 2007., 2007.
G. E. Ghezzi, J. Y. Raty, S. Maitrejean, A. Roule, E. Elkaim, and F. Hippert, "Effect of carbon doping on the structure of amorphous GeTe phase change material," Appl. Phys. Let., vol. 99, pp. 151906-3, 2011.
O. Cueto, C. Jahan, V. Sousa, et al. "Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells," Microelectronic Engineering, vol. 88, pp. 827-832, May 2011.
I. S. Kim, S. L. Cho, D. H. Im et al., "High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications," presented at the 2010 Symposium on VLSI Technology (VLSI), 2010.
E. Gouvest, C. Vallee, P. Michallon et al. "Plasma Enhanced Chemical Vapor Deposition of Conformal GeTe Layer for Phase Change Memory Applications," Submitted.
S. Maitrejean, S. Lhostis, S. Haukka, et al. "Demonstration of Phase Change Memories devices using GeSbTe films deposited by Atomic Layer Deposition," in 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM) 2011, pp. 1-3.
G. E. Ghezzi, R. Morel, A. Brenac, N. Boudet, M. Audier, F. Fillot, F. Hippert, and S. Maitrejean, submitted.