Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

Poster (Scientific congresses and symposiums)

Baert, Bruno; Gupta, Somya; Schmeits, Marcel et al.

2013 • The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)

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https://hdl.handle.net/2268/146470

Baert_ICSI_8_Abstract_final.pdf

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Keywords :

GeSn; interface states; admittance spectroscopy

Disciplines :

Electrical & electronics engineering

Author, co-author :

Baert, Bruno ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Gupta, Somya; IMEC

Schmeits, Marcel ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Simoen, Eddy; IMEC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Language :

English

Title :

Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

Publication date :

June 2013

Event name :

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)

Event place :

Fukuoka, Japan

Event date :

2-7 juin 2013

Audience :

International

Available on ORBi :

since 09 April 2013

Number of views

73 (11 by ULiège)

Number of downloads

3 (2 by ULiège)