SiGe:C HBT; Ge-spiked monoemitter; trisilane; low-temperature CVD; chemical vapor deposition
Abstract :
[en] In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.
Disciplines :
Physics
Author, co-author :
You, Shuzhen; IMEC
Decoutere, Stefaan; IMEC
Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Van Huylenbroeck, Stefaan; IMEC
Sibaja-Hernandez, Arturo; IMEC
Venegas, Rafael; IMEC
Loo, Roger; IMEC
De Meyer, Kristin; IMEC
Language :
English
Title :
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition
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http://www.dotfive.eu
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