Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition

You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin

doi:10.1016/j.tsf.2011.10.079

Article (Scientific journals)

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition

You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy et al.

2012 • In Thin Solid Films, 520, p. 3345

Peer Reviewed verified by ORBi

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https://hdl.handle.net/2268/102196

DOI
10.1016/j.tsf.2011.10.079

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Keywords :

SiGe:C HBT; Ge-spiked monoemitter; trisilane; low-temperature CVD; chemical vapor deposition

Abstract :

[en] In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.

Disciplines :

Physics

Author, co-author :

You, Shuzhen; IMEC

Decoutere, Stefaan; IMEC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Van Huylenbroeck, Stefaan; IMEC

Sibaja-Hernandez, Arturo; IMEC

Venegas, Rafael; IMEC

Loo, Roger; IMEC

De Meyer, Kristin; IMEC

Language :

English

Title :

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition

Publication date :

2012

Journal title :

Thin Solid Films

ISSN :

0040-6090

Publisher :

Elsevier Science

Volume :

520

Pages :

3345

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 09 November 2011

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