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Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition
You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy et al.
2012In Thin Solid Films, 520, p. 3345

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You_TSF_520_3345_2012.pdf

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