[en] During first metal level interconnects fabrication, a controlled modification of the electro-deposited copper over-deposition (overburden) is performed using a partial chemical–mechanical polishing (CMP) step. Next, copper microstructure is stabilized with a short duration hot-plate anneal. Overburden is then removed during CMP end-of-step. Ionic microscopy and EBSD observations of overburden thickness reduction reveal that copper grain growth occurs differently, according to patterned geometries and with a strong (1 1 1) texture, as observed in modified films. Reduction of overburden thickness also reveals the capacity of anneal temperature to impact electrical performances. Reliability is impacted for thinnest wires.
Research Center/Unit :
STMicroelectronics (Crolles 300) Laboratoire des Matériaux et du Génie Physique (LMGP-Université de Grenoble)
Disciplines :
Physics
Author, co-author :
Dubreuil, Olivier ; Université de Liège - ULiège > Département de chimie (sciences) > LCIS - GreenMAT
Caubet-Hilloutou, Véronique
Guillan, Julie
Haxaire, Katia
Mellier, Maxime
Caubet, Pierre
Vannier, Patrick
Petitprez, Emmanuel
Bellet, Daniel
Normandon, Philippe
Language :
English
Title :
Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances
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Bibliography
Steinhögl, W., Schindler, G., Steinlesberger, G., Engelhardt, M., (2002) Phys. Rev. B, 66 (75414), pp. 1-4
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