Epitaxial Si, SiGe and Ge for high-performance devices

Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Ngoc Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty

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Epitaxial Si, SiGe and Ge for high-performance devices

Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin et al.

2010 • ASM User Meeting

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https://hdl.handle.net/2268/71424

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Keywords :

Epitaxy; CVD; Si; Ge; SiGe; High-performance device

Disciplines :

Materials science & engineering

Author, co-author :

Loo, Roger; IMEC

Hikavyy, Andriy; IMEC

Vincent, Benjamin; IMEC

Wang, Gang; IMEC

Vanherle, Wendy; IMEC

Gencarelli, Federica; IMEC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Rosseel, Erik; IMEC

Souriau, Laurent; IMEC

Rondas, Dirk; IMEC

Dekoster, Johan; IMEC

Caymax, Matty; IMEC

Language :

English

Title :

Epitaxial Si, SiGe and Ge for high-performance devices

Publication date :

23 September 2010

Event name :

ASM User Meeting

Event organizer :

ASM

Event place :

Munich, Germany

Event date :

23/09/2010

By request :

Yes

Audience :

International

Available on ORBi :

since 07 September 2010

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