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Unpublished conference/Abstract (Scientific congresses and symposiums)
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Reiche, M.; Moutanabbir, O.; Himcinschi, C. et al.
2008 • 214th ECS Meeting, 2008
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https://hdl.handle.net/2268/69229
 

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Keywords :
Strained silicon; Wafer bonding; Strain relaxation; Strain measurement
Disciplines :
Materials science & engineering
Author, co-author :
Reiche, M.;  Max Planck Institut of Microstructure Physics
Moutanabbir, O.;  Max Planck Institut of Microstructure Physics
Himcinschi, C.;  Max Planck Institut of Microstructure Physics
Christiansen, S.;  Max Planck Institut of Microstructure Physics
Erfurth, E.;  Max Planck Institut of Microstructure Physics
Gösele, U.;  Max Planck Institut of Microstructure Physics
Mantl, S.;  Research Center Jülich > Institute of Bio- and Nanosystems
Buca, D.;  Research Center Jülich > Institute of Bio- and Nanosystems
Zhao, Q.;  Research Center Jülich > Institute of Bio- and Nanosystems
Loo, R.;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Muster, F.;  Fraunhofer Institute for Mechanics of Materials
Petzold, M.;  Fraunhofer Institute for Mechanics of Materials
More authors (3 more) Less
Language :
English
Title :
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Publication date :
2008
Event name :
214th ECS Meeting, 2008
Event organizer :
ECS
Event place :
Honolulu, United States
Event date :
12-17/10/2008
Audience :
International
Available on ORBi :
since 16 August 2010

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