Zero-Bias Si Backward Diodes Detectors Incorporating P and B δ-Doping Layers Grown by Chemical Vapor Deposition

For the first time, CVD-grown Si only backward diode detectors incorporating ¿doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 k¿ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area focal plane arrays with low cost is now possible.