Reference : In-line characterization of heterojunction bipolar transistor base layers by high-res...
Scientific congresses and symposiums : Unpublished conference/Abstract
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/69099
In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
English
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, R. [IMEC > > > > > >]
Hikavyy, A. [IMEC > > > > > >]
Van Daele, B. [IMEC > > > > > >]
Ryan, P. [IMEC > > > > > >]
Wormington, M. [IMEC > > > > > >]
Hopkins, J. [IMEC > > > > > >]
2007
Yes
International
Analytical Techniques for Semiconductor Materials and Process Characterization (ALTECH)
13-14/9/2007
University of Francfort
Munich
Germany
[en] In-line characterization ; Heterojunction ; Bipolar transistor ; High-resolution X-ray diffraction
Researchers ; Professionals
http://hdl.handle.net/2268/69099

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