Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs

You, Suzhen; Van Huylenbroeck, Stefaan; Nguyen, Ngoc Duy; Sibaja-Hernandez, Arturo; Venegas, Rafael; Van Wichelen, Koen; Decoutere, Stefan; De Meyer, Kristin

doi:10.1016/j.tsf.2009.10.058

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Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs

You, Suzhen; Van Huylenbroeck, Stefaan; Nguyen, Ngoc Duy et al.

2009 • In Thin Solid Films, 518 (6), p. 68

Peer Reviewed verified by ORBi

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https://hdl.handle.net/2268/68823

DOI
10.1016/j.tsf.2009.10.058

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Keywords :

SiGe:C HBT; Maximum oscillation frequency; Non-selective epitaxy

Abstract :

[en] This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external base poly, and using an optimized non-selective epitaxy process with improved growth rate ratio of 1.7 between the polycrystalline silicon and monocrystalline silicon of the base, the maximum oscillation frequency fmax reaches 300 GHz.

Disciplines :

Electrical & electronics engineering

Author, co-author :

You, Suzhen; IMEC

Van Huylenbroeck, Stefaan; IMEC

Nguyen, Ngoc Duy ; IMEC

Sibaja-Hernandez, Arturo; IMEC

Venegas, Rafael; IMEC

Van Wichelen, Koen; IMEC

Decoutere, Stefan; IMEC

De Meyer, Kristin; IMEC

Language :

English

Title :

Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs

Publication date :

2009

Journal title :

Thin Solid Films

ISSN :

0040-6090

Publisher :

Elsevier Science

Volume :

518

Issue :

Pages :

S68

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 13 August 2010

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