Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Buca, D.; Trinkaus, H.; Holländer, B.; Loo, R.; Nguyen, Ngoc Duy; Mantl, S.

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Unpublished conference/Abstract (Scientific congresses and symposiums)

Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Buca, D.; Trinkaus, H.; Holländer, B. et al.

2008 • 4th International SiGe Technology and Device Meeting (ISTDM)

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Keywords :

He implantation; SiGe; Layer relaxation; Si:C

Disciplines :

Electrical & electronics engineering

Author, co-author :

Buca, D.; Research Center Jülich > Institute of Bio- and Nanosystems

Trinkaus, H.; Research Center Jülich > Institute of Bio- and Nanosystems

Holländer, B.; Research Center Jülich > Institute of Bio- and Nanosystems

Loo, R.; IMEC

Nguyen, Ngoc Duy ; IMEC

Mantl, S.; Research Center Jülich > Institute of Bio- and Nanosystems

Language :

English

Title :

Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Publication date :

2008

Event name :

4th International SiGe Technology and Device Meeting (ISTDM)

Event organizer :

Nano Device Laboratories Taiwan

Event place :

Hsinchu, Taiwan

Event date :

11-14/5/2008

Audience :

International

Available on ORBi :

since 12 August 2010

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