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Poster (Scientific congresses and symposiums)
Conformal ultra shallow junctions by vapor phase doping with boron
Nguyen, Ngoc Duy
;
Leys, Frederik
;
Takeuchi, Shotaro
et al.
2008
•
4th International SiGe Technology and Device Meeting (ISTDM)
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https://hdl.handle.net/2268/68716
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Keywords :
Vapor phase doping; Conformal doping; Ultra shallow junction; FinFET; Boron doping
Disciplines :
Electrical & electronics engineering
Author, co-author :
Nguyen, Ngoc Duy
;
IMEC
Leys, Frederik;
IMEC
Takeuchi, Shotaro;
IMEC
Loo, Roger;
IMEC
Caymax, Matty;
IMEC
Eyben, Pierre;
IMEC
Vandervorst, Wilfried;
IMEC
Language :
English
Title :
Conformal ultra shallow junctions by vapor phase doping with boron
Publication date :
2008
Event name :
4th International SiGe Technology and Device Meeting (ISTDM)
Event organizer :
Nano Device Laboratories Taiwan
Event place :
Hsinchu, Taiwan
Event date :
11-14/5/2008
Audience :
International
Available on ORBi :
since 12 August 2010
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