Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

Takeuchi, Shotaro; Yang, Lijun; Nguyen, Ngoc Duy; Loo, Roger; Conard, Thierry; Pourtois, Geoffrey; Vandervorst, Wilfried; Caymax, Matty

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Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

Takeuchi, Shotaro; Yang, Lijun; Nguyen, Ngoc Duy et al.

2008 • 4th International Workshop on New Group IV Semiconductor Nanoelectronics

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https://hdl.handle.net/2268/68702

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Keywords :

Atomic layer epitaxy; Atomic layer doping; Phosphorus; Arsenic

Disciplines :

Physics

Author, co-author :

Takeuchi, Shotaro; IMEC

Yang, Lijun; IMEC

Nguyen, Ngoc Duy ; IMEC

Loo, Roger; IMEC

Conard, Thierry; IMEC

Pourtois, Geoffrey; IMEC

Vandervorst, Wilfried; IMEC

Caymax, Matty; IMEC

Language :

English

Title :

Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

Publication date :

2008

Event name :

4th International Workshop on New Group IV Semiconductor Nanoelectronics

Event organizer :

Tohoku University

Event place :

Sendai, Japan

Event date :

25-27/9/2008

Audience :

International

Available on ORBi :

since 12 August 2010

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