Back
  1. Home
  3. Detailled Reference
No full text
Unpublished conference/Abstract (Scientific congresses and symposiums)
Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer
Buca, D.; Goryll, M.; Holländer, B. et al.
2007 • Materials Research Society Spring Meeting 2007
Permalink
https://hdl.handle.net/2268/68687
 

Files (0)Send toDetailsStatisticsBibliographySimilar publications

Files

Full Text
No document available.

Send to


Details


Keywords :
He implantation; SiGe; Relaxation
Disciplines :
Electrical & electronics engineering
Author, co-author :
Buca, D.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Goryll, M.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Holländer, B.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Trinkaus, H.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Mantl, S.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Loo, R.;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Language :
English
Title :
Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer
Publication date :
2007
Event name :
Materials Research Society Spring Meeting 2007
Event organizer :
Material Research Society
Event place :
San Francisco, United States
Event date :
9-13/4/2007
Audience :
International
Additional URL :
http://www.mrs.org/s_mrs/doc.asp?CID=7486&DID=184939
Available on ORBi :
since 12 August 2010

Statistics

Number of views
39 (0 by ULiège)
Number of downloads
0 (0 by ULiège)
More statistics

Bibliography

Similar publications


Contact ORBi