In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction

Nguyen, Ngoc Duy; Loo, R.; Hikavyy, A.; Van Daele, B.; Ryan, P.; Wormington, M.; Hopkins, J.

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Poster (Scientific congresses and symposiums)

In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction

Nguyen, Ngoc Duy; Loo, R.; Hikavyy, A. et al.

2007 • 3rd International Workshop on New Group IV Semiconductor Nanoelectronics

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https://hdl.handle.net/2268/68677

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Keywords :

In-line characterization; Heterojunction; Bipolar transistor; HRXRD

Disciplines :

Electrical & electronics engineering

Author, co-author :

Nguyen, Ngoc Duy ; IMEC

Loo, R.; IMEC

Hikavyy, A.; IMEC

Van Daele, B.; IMEC

Ryan, P.; Bede plc

Wormington, M.; Bede plc

Hopkins, J.; Bede plc

Language :

English

Title :

In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction

Publication date :

2007

Event name :

3rd International Workshop on New Group IV Semiconductor Nanoelectronics

Event organizer :

Tohoku University

Event place :

Sendai, Japan

Event date :

8-9/11/2007

Audience :

International

Available on ORBi :

since 12 August 2010

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