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Large current enhancement in n-MOSFETs with strained Si on insulator
Mantl, S.; Buca, D.; Zhao, Q. et al.
2007In International Semiconductor Device Research Symposium, 2007
Peer reviewed
 

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Keywords :
Strained silicon-on-insulator; MOSFET
Abstract :
[en] As scaling of the critical transistor dimensions below 65 nm has been slowed down, the implementation of novel materials, especially high mobility channel materials is most attractive to boost the transistor performance. Applying strain to silicon has become a successful route. The electron mobility can be enhanced by biaxial strain introduced into Si by epitaxial growth of Si on a strain relaxed SiGe layer or by so called process induced methods applied directly on transistor level. The combination of strained Si and SOI is particularly promising due to the combination of the enhanced mobilities and the inherent advantages of SOI. First long channel n-MOSFETs with gate lengths of 5 to 50 mum and a 6.6 nm thick SiO2 gate dielectric were fabricated. For comparison, devices on unstrained SOI were made. The transfer characteristics of a fully depleted sSOI-MOSFET with a gate length of 5 mum and a gate width of 20 mum indicating an inverse sub-threshold slope of 75mV/dec.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Mantl, S.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Buca, D.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Zhao, Q.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Holländer, B.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Feste, S.;  Research Center Jülich > Institut für Bio- und Nanosysteme and cni – Center of NanoelectronicSystems for Information Technology
Luysberg, M.;  Research Center Jülich > Institut für Festkörperforschung
Reiche, M.;  Max Planck Institute of Microstructure Physics
Gösele, U.;  Max Planck Institute of Microstructure Physics
Buchholtz, W.;  AMD Saxony LLC & Co. KG
Wei, A.;  AMD Saxony LLC & Co. KG
Horstmann, M.;  AMD Saxony LLC & Co. KG
Loo, R.;  IMEC
More authors (3 more) Less
Language :
English
Title :
Large current enhancement in n-MOSFETs with strained Si on insulator
Publication date :
2007
Event name :
International Semiconductor Device Research Symposium, 2007
Event organizer :
University of Maryland
Event place :
College Park, United States
Event date :
12-14/12/2007
Audience :
International
Main work title :
International Semiconductor Device Research Symposium, 2007
Publisher :
IEEE, Los Alamitos, United States
ISBN/EAN :
978-1-4244-6030-4
Peer reviewed :
Peer reviewed
Available on ORBi :
since 12 August 2010

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