Reference : Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high...
Scientific congresses and symposiums : Unpublished conference/Abstract
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/68546
Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
English
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2007
Yes
International
Fifth International Symposium on Control of Semiconductor Interfaces
12-14/11/2007
Tokyo Metropolitan University
Tokyo
Japan
[en] Si-precursor ; Trisilane ; Low-temperature chemical vapor deposition ; Growth rate ; n-Type doping
[en] We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application.
Researchers ; Professionals
http://hdl.handle.net/2268/68546

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Restricted access
Nguyen_ISCSI_2007.pdfAuthor postprint53.5 kBRequest copy

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.