Unpublished conference/Abstract (Scientific congresses and symposiums)
Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
Nguyen, Ngoc Duy; Loo, Roger; Caymax, Matty
2007Fifth International Symposium on Control of Semiconductor Interfaces
 

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Keywords :
Si-precursor; Trisilane; Low-temperature chemical vapor deposition; Growth rate; n-Type doping
Abstract :
[en] We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application.
Disciplines :
Materials science & engineering
Author, co-author :
Nguyen, Ngoc Duy  ;  IMEC
Loo, Roger;  IMEC
Caymax, Matty;  IMEC
Language :
English
Title :
Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
Publication date :
2007
Event name :
Fifth International Symposium on Control of Semiconductor Interfaces
Event organizer :
Tokyo Metropolitan University
Event place :
Tokyo, Japan
Event date :
12-14/11/2007
Audience :
International
Available on ORBi :
since 12 August 2010

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