Article (Scientific journals)
The photorefractive effect at large modulation depth in semiconductors with multiple defect levels
Nguyen, Ngoc Duy; Schmeits, Marcel
2002In Applied Physics. B, Lasers and Optics, 74, p. 35
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Keywords :
Photorefractive effect; Defect level; Semiconductor; Large modulation
Abstract :
[en] The photorefractive effect in semiconducting mate- rials with multiple defects is studied in the case of modulation depth m = 1. The basic equations are Poisson's equation and the continuity equations for electrons, holes and occupied defect levels. They include all recombination and optical generation mechanisms between the defect levels and valence and conduc- tion bands. Their explicit numerical solution yields microscopic quantities such as space- and time-dependent electrical field profiles, carrier concentrations, as well as generation and re- combination rates. The fundamental Fourier component of the electric field yields the two-wave-mixing gain. Application is made for InP with two levels in the forbidden gap, for which steady-state and transient resulting quantities are shown. The re- sulting features at large modulation depth are of non-sinusoidal shape. Due to the complexity of the system, the final results strongly depend on all parameters intervening in the models used, as is illustrated for several typical cases.
Disciplines :
Physics
Author, co-author :
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Schmeits, Marcel ;  Université de Liège - ULiège > Département de physique
Language :
English
Title :
The photorefractive effect at large modulation depth in semiconductors with multiple defect levels
Publication date :
2002
Journal title :
Applied Physics. B, Lasers and Optics
ISSN :
0946-2171
eISSN :
1432-0649
Publisher :
Springer Science & Business Media B.V., New York, United States - New York
Volume :
74
Pages :
35
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 10 August 2010

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