The digital file(s) of the author’s published article on Wiley Online Library is available for download using the link below and is subject to the following terms of use: You may use the digital file(s) only for research purposes. Unless expressly licensed by a Wiley-Blackwell company, you are not permitted to upload the digital file(s) on to any publicly accessible website or to engage in any systematic distribution of the digital file(s) in print or electronic format, whether or not for commercial or non-profit use, whether for a fee or free of charge. You may not modify or commercially exploit the digital file(s) in any way.
All documents in ORBi are protected by a user license.
[en] Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature. Evidence of two impurity levels results from the analysis of the observed peaks in the conductance curves, whose positions and strengths are temperature dependent. The experimental results are analyzed within a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structure. Numerical simulations are based on the solution of the basic semiconductor equations for the structure consisting of two Schottky diodes connected back-to-back by a conduction channel formed by the GaN layer.
Disciplines :
Physics
Author, co-author :
Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Germain, Marianne; Université de Liège - ULiège > Département de physique
Schmeits, Marcel; Université de Liège - ULiège > Département de physique
Schineller, Bernd; AIXTRON AG
Heuken, Michael; AIXTRON AG
Language :
English
Title :
Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy
