Article (Scientific journals)
Ternary logic implemented on a single dopant atom field effect silicon transistor
Klein, M.; Mol, J. A.; Verduijn, J. et al.
2010In Applied Physics Letters, 96, p. 043107
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Disciplines :
Physical, chemical, mathematical & earth Sciences: Multidisciplinary, general & others
Author, co-author :
Klein, M.;  Hebrew University of Jerusalem > Fritz Haber Center
Mol, J. A.;  TU-Deft > Kavli Institute
Verduijn, J.;  TU-Delft > Kavli Institute
Lansbergen, G. P.;  TU-Delft > Kavli Institute
Rogge, S.
Levine, Raphaël David;  Hebrew University of Jerusalem > Fritz Haber Center
Remacle, Françoise  ;  Université de Liège - ULiège > Département de chimie (sciences) > Laboratoire de chimie physique théorique
Language :
English
Title :
Ternary logic implemented on a single dopant atom field effect silicon transistor
Publication date :
2010
Journal title :
Applied Physics Letters
ISSN :
0003-6951
eISSN :
1077-3118
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
96
Pages :
043107
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 11 July 2010

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