Article (Scientific journals)
Microscopic understanding of the in-plane thermal transport properties of 2H transition metal dichalcogenides
Farris, Roberta; Hellman, Olle; Zanolli, Zeila et al.
2024In Physical Review. B, 109 (12)
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Keywords :
Dichalcogenides; Group velocities; Heat transport; Key factors; Layered material; Phonon lifetimes; Practical use; Silicene; Theoretical investigations; Thermal transport properties; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Abstract :
[en] Transition metal dichalcogenides (TMDs) are a class of layered materials that hold great promise for a wide range of applications. Their practical use can be limited by their thermal transport properties, which have proven challenging to determine accurately, both from a theoretical and experimental perspective. We have conducted a thorough theoretical investigation of the thermal conductivity of four common TMDs, MoSe2, WSe2, MoS2, and WS2, at room temperature, to determine the key factors that influence their thermal behavior. We analyze these materials using ab initio calculations performed with the siesta program, anharmonic lattice dynamics and the Boltzmann transport equation formalism, as implemented in the temperature-dependent effective potentials method. Within this framework, we analyze the microscopic parameters influencing the thermal conductivity, such as the phonon dispersion and the phonon lifetimes. The aim is to precisely identify the origin of differences in thermal conductivity among these canonical TMD materials. We compare their in-plane thermal properties in monolayer and bulk form, and we analyze how the thickness and the chemical composition affect the thermal transport behavior. We showcase how bonding and the crystal structure influence the thermal properties by comparing the TMDs with silicon, reporting the cases of bulk silicon and monolayer silicene. We find that the interlayer bond type (covalent vs. van der Waals) involved in the structure is crucial in the heat transport. In two-dimensional silicene, we observe a reduction by a factor ∼15 compared to the Si bulk thermal conductivity due to the smaller group velocities and shorter phonon lifetimes. In the TMDs, where the group velocities and the phonon bands do not vary significantly passing from the bulk to the monolayer limit, we do not see as strong a decrease in the thermal conductivity: only a factor 2-3. Moreover, our analysis reveals that differences in the thermal conductivity arise from variations in atomic species, bond strengths, and phonon lifetimes. These factors are closely interconnected and collectively impact the overall thermal conductivity. We inspect each of them separately and explain how they influence the heat transport. We also study artificial TMDs with modified masses, in order to assess how the chemistry of the compounds modifies the microscopic quantities and thus the thermal conductivity.
Disciplines :
Physics
Author, co-author :
Farris, Roberta ;  Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC), Campus UAB, Barcelona, Spain
Hellman, Olle;  Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel
Zanolli, Zeila  ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures ; Chemistry Department, Debye Institute for Nanomaterials Science Condensed Matter and Interfaces, Utrecht University, Utrecht, Netherlands
Saleta Reig, David ;  Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC), Campus UAB, Barcelona, Spain ; Department of Applied Physics, TU Eindhoven, Eindhoven, Netherlands
Varghese, Sebin ;  Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC), Campus UAB, Barcelona, Spain ; Department of Applied Physics, TU Eindhoven, Eindhoven, Netherlands
Ordejón, Pablo ;  Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC), Campus UAB, Barcelona, Spain
Tielrooij, Klaas-Jan ;  Catalan Institute of Nanoscience and Nanotechnology - ICN2 (BIST and CSIC), Campus UAB, Barcelona, Spain ; Department of Applied Physics, TU Eindhoven, Eindhoven, Netherlands
Verstraete, Matthieu  ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures ; Physics Department, ITP Utrecht University, Utrecht, Netherlands
Language :
English
Title :
Microscopic understanding of the in-plane thermal transport properties of 2H transition metal dichalcogenides
Publication date :
15 March 2024
Journal title :
Physical Review. B
ISSN :
2469-9950
eISSN :
2469-9969
Publisher :
American Physical Society
Volume :
109
Issue :
12
Peer reviewed :
Peer Reviewed verified by ORBi
Funders :
EU - European Union
AEI - Agencia Estatal de Investigación
ERDF - European Regional Development Fund
OCW - Ministerie van Onderwijs, Cultuur en Wetenschap
ULiège - Université de Liège
FWB - Fédération Wallonie-Bruxelles
Funding text :
We acknowledge Dr. Alois Castellano for providing the 4phi implementation in TDEP useful for computing the four phonons scattering contributions. R.F. and P.O. acknowledge support by the EU H2020-NMBP-TO-IND-2018 project \u201CINTERSECT\u201D (Grant No. 814487) and Grant No. PID2022-139776NB-C62 funded by Spanish MCIN/AEI/10.13039/501100011033 and by ERDF A way of making Europe. R.F. and K.-J.T. acknowledge financial support by the Spanish State Research Agency under Contract No. PID2019-111673GB-I00/AEI/10.13039/501100011033 and the European Union's Horizon 2020 Research and Innovation Program under Grant Agreement No. 804349 (ERC StG CUHL). M.-J.V. acknowledges funding from ARC project DREAMS (G.A. 21/25-11) funding by the Federation Wallonie Bruxelles and ULiege, Belgium. Z.Z. acknowledges financial support by the Netherlands Sector Plan program 2019-2023 and the research program \u201CMaterials for the Quantum Age\u201D (QuMat, registration number 024.005.006), part of the Gravitation program of the Dutch Ministry of Education, Culture and Science (OCW). We acknowledge a PRACE award granting access to MareNostrum4 at Barcelona Supercomputing Center (BSC), Spain and Discoverer in SofiaTech, Bulgaria (OptoSpin Project Id. 2020225411). The ICN2 is supported by the Severo Ochoa Centres of Excellence programme, Grant No. CEX2021-001214-S, funded by MCIN/AEI/10.13039.501100011033
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