[en] In magnetic tunnel junctions (MTJs), an antiferromagnetic iridium manganese (IrMn) layer neighboring a ferromagnetic electrode is indispensable for pinning the magnetization of the ferromagnet. The effect of its antiferromagnetism on adjacent ferromagnet and, thus, the quantum transport is, nevertheless, scarcely studied. Here, we investigate the role of antiferromagnetically orientated Mn spins in IrMn on the spin-dependent tunneling transport in IrMn/FeCo/MgO/FeCo/IrMn MTJ by analyzing the tunneling magnetoresistance (TMR) effect. The opposite spin orientation of Mn induces the mixing of Bloch symmetries, Δ 1 and Δ 5 , irrespective of the spin alignment of the FeCo electrode. This auxiliary contribution from the Mn spins improves the tunneling in majority- and minority-spin channels in parallel configuration. In the antiparallel configuration, the tunneling in majority- and minority-spin channels is non-identical. The TMR as high as 8643% is obtained under equilibrium. In addition, the non-equilibrium behavior of TMR and the spin-filtering effect are examined in the voltage bias range of 10-50 mV. The TMR ratio of 3600% with the spin-filtering efficiency of ∼ 98% is maintained at 50 mV, presenting the MTJ as an effective spin-filtering device robust to the bias endurance. Finally, it is speculated that our device structure can be a potential spin-orbit torque-based MTJ that offers a giant TMR and promotes upscaling of the generation of multi-bit devices with a simplified design strategy.
Disciplines :
Physics
Author, co-author :
Chandrashekhar Koli, Shradha ; School of Integrated Circuit Science and Engineering, MIIT Key Laboratory of Spintronics, Beihang University, Beijing, China ; Institut fur Physik, Johannes Gutenberg Universität Mainz, Mainz, Germany
Dupé, Bertrand ; Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures ; Institut fur Physik, Johannes Gutenberg Universität Mainz, Mainz, Germany ; Fonds de la Recherche Scientifique (FNRS), Brussels, Belgium
Zhou, Hangyu ; School of Integrated Circuit Science and Engineering, MIIT Key Laboratory of Spintronics, Beihang University, Beijing, China
Zhao, Weisheng ; School of Integrated Circuit Science and Engineering, MIIT Key Laboratory of Spintronics, Beihang University, Beijing, China
Language :
English
Title :
Improvement of tunneling magnetoresistance induced by antiferromagnetic spin orientation
S.C.K and W.Z. thank Jiaqi Zhou for her participation in the early stages of this work. This work was funded by the National Key R&D Program of China (No. 2018YFB0407602), the Beijing Municipal Science and Technology Project (No. Z201100004220002), the International Collaboration Project (No. B16001), and the Beihang Hefei Innovation Research Institute (Project No. BHKX-19-02). Shradha C. Koli acknowledges the China Scholarship Council (CSC) for financial support. Shradha C. Koli also gratefully acknowledges financial support from the Graduate School of Excellence Materials Science in Mainz (MAINZ), Germany. Parts of this research were conducted using the supercomputer Mogon and advisory services offered by Johannes Gutenberg University Mainz (hpc.uni-mainz.de), which is a member of the AHRP (Alliance for High-Performance Computing in Rhineland Palatinate, www.ahrp.info) and the Gauss Alliance e.V. We acknowledge the computing time granted on the supercomputer Mogon at Johannes Gutenberg University Mainz (hpc.uni-mainz.de) and computing time at Mogon supercomputers.
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