Article (Scientific journals)
Effects of pressure on the electronic and magnetic properties of bulk NiI2
Kapeghian, Jesse; Amoroso, Danila; Occhialini, Connor A. et al.
2024In Physical Review. B, 109 (1)
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Keywords :
Dihalides; Effect of pressure; Electronic and magnetic properties; First principle calculations; Interlayer coupling; Magnetic response; Magnetic transition temperature; Monte Carlo's simulation; Two-dimensional; Van der Waal; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Abstract :
[en] Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI2 is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the effects of hydrostatic pressure as a means to enhance this interlayer exchange and ultimately tune the electronic and magnetic response of NiI2. We study first the evolution of the structural parameters as a function of external pressure using first-principles calculations combined with x-ray diffraction measurements. We then examine the evolution of the electronic structure and magnetic exchange interactions via first-principles calculations and Monte Carlo simulations. We find that the leading interlayer coupling is an antiferromagnetic second-nearest-neighbor interaction that increases monotonically with pressure. The ratio between isotropic third- and first-nearest-neighbor intralayer exchanges, which controls the magnetic frustration and determines the magnetic propagation vector q of the helimagnetic ground state, is also enhanced by pressure. As a consequence, our Monte Carlo simulations show a monotonic increase in the magnetic transition temperature, indicating that pressure is an effective means to tune the magnetic response of NiI2.
Research center :
CESAM - Complex and Entangled Systems from Atoms to Materials - ULiège [BE]
Disciplines :
Physics
Author, co-author :
Kapeghian, Jesse ;  Department of Physics, Arizona State University, Tempe, United States
Amoroso, Danila ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures
Occhialini, Connor A.;  Department of Physics, Massachusetts Institute of Technology, Cambridge, United States
Martins, Luiz G. P. ;  Department of Physics, Massachusetts Institute of Technology, Cambridge, United States
Song, Qian;  Department of Physics, Massachusetts Institute of Technology, Cambridge, United States
Smith, Jesse S.;  HPCAT, Advanced Photon Source, Argonne National Laboratory, Lemont, United States
Sanchez, Joshua J. ;  Department of Physics, Massachusetts Institute of Technology, Cambridge, United States
Kong, Jing;  Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, United States
Comin, Riccardo;  Department of Physics, Massachusetts Institute of Technology, Cambridge, United States
Barone, Paolo ;  Consiglio Nazionale delle Ricerche CNR-SPIN, Area della Ricerca di Tor Vergata, Rome, Italy
Dupé, Bertrand  ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures ; Fonds de la Recherche Scientifique (FNRS), Bruxelles, Belgium
Verstraete, Matthieu  ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures ; European Theoretical Spectroscopy Facility, Spain
Botana, Antia S.;  Department of Physics, Arizona State University, Tempe, United States
More authors (3 more) Less
Language :
English
Title :
Effects of pressure on the electronic and magnetic properties of bulk NiI2
Publication date :
2024
Journal title :
Physical Review. B
ISSN :
2469-9950
eISSN :
2469-9969
Publisher :
American Physical Society
Volume :
109
Issue :
1
Peer reviewed :
Peer Reviewed verified by ORBi
Tags :
CÉCI : Consortium des Équipements de Calcul Intensif
Tier-1 supercomputer
Funders :
NSF - National Science Foundation [US-VA]
Alfred P. Sloan Foundation [US-NY]
F.R.S.-FNRS - Fonds de la Recherche Scientifique [BE]
Funding text :
We thank S. Picozzi for useful discussions during the early stages of this work. J.K. acknowledges support from NSF Grant No. DMR 2206987. A.S.B. was supported by the Alfred P. Sloan Foundation FG-2022-19086. We thank the ASU Research Computing Center for high-performance computing resources. D.A., B.D., and M.J.V. acknowledge the SWIPE project funded by FNRS Belgium Grant No. PINT-MULTIR.8013.20. M.J.V. acknowledges ARC project DREAMS (G.A. 21/25-11) funded by Federation Wallonie Bruxelles and ULiege. P.B. acknowledges financial support from the Italian MIUR through Project No. PRIN 2017Z8TS5B. C.A.O., L.G.P.M., Q.S., and R.C. acknowledge support from the US Department of Energy, BES under Award No. DE-SC0019126 (materials synthesis and characterization and x-ray diffraction measurements).
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