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• McKee, R. A., Walker, F. J. & Chisholm, M. F. Physical structure and inversion charge at a semiconductor with a crystalline oxide. Science 293, 468-471 (2001).
• Tybell, Th., Paruch, P., Giamarchi, T. & Triscone, J.-M. Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films. Phys. Rev. Lett. 89, 097601 (2002).
• Tybell, Th., Ahn, C. H. & Triscone, J.-M. Ferroelectricity in thin perovskite films. Appl. Phys. Lett. 75, 856-858 (1999).
• Ghosez, Ph. & Rabe, K. M. Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films. Appl. Phys. Lett. 76, 2767-2769 (2000).
• Meyer, B. & Vanderbilt, D. Ab initio study of BaTiO3 and PbTiO3 surfaces in external electric fields. Phys. Rev. B 63, 205426 (2001).
• McKee, R. A., Walker, F. J. & Chisholm, M. F. Crystalline oxides on silicon: the first five monolayers. Phys. Rev. Lett. 81, 3014-3017 (1998).
• Ahn, C. H. et al. Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures. Science 276, 1100-1103 (1997).
• Eisenbeiser, K. et al. Field effect transistors with SrTiO3 gate dielectric on Si. Appl. Phys. Lett. 76, 1324-1326 (2000).
• Tybell, Th., Ahn, C. H. & Triscone, J.-M. Control and imaging of ferroelectric domains over large areas with nanometer resolution in atomically smooth epitaxial Pb(Zr0.52Ti0.48)O3 thin films. Appl. Phys. Lett. 72, 1454-1456 (1998).
• Scott, J. F. & Paz de Araujo, C. A. Ferroelectric memories. Science 246, 1400-1405 (1989).
• Lines, M. E. & Glass, A. M. Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
• Bune, A. V. et al. Two-dimensional ferroelectric films. Nature 391, 874-877 (1998).
• Kohlstedt, H., Pertsev, N. A. & Waser, R. Size effects on polarization in epitaxial ferroelectric films and the concept of ferroelectric tunnel junctions including first results. Mater Res. Soc. Symp. Proc. 688, C6.5 (2002).
• Rao, F., Kim, M., Freeman, A. J., Tang, S. & Anthony, M. Structural and electronic properties of transition-metal/BaTiO3 (001) interfaces. Phys. Rev. B 55, 13953-13960 (1997).
• Eom, C. B. et al. Single-crystal epitaxial thin films of the isotopic metallic oxides Sr1-xCaxRuO3 (0 ≤ x ≤ 1). Science 258, 1766-1769 (1992).
• Soler, J. M. et al. The SIESTA method for ab initio order-N materials simulations. J. Phys. Condens. Matter 14, 2745-2779 (2002).
• Hartmann, A. J., Neilson, M., Lamb, R. N., Watanabe, K. & Scott, J. F. Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-film capacitors. Appl. Phys. A 70, 239-242 (2000).
• Ahn, C. H. et al. Ferroelectric field effect in ultrathin SrRuO3 films. Appl. Phys. Lett. 70, 206-208 (1997).
• Eom, C. B. et al. Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes. Appl. Phys. Lett. 63, 2570-2572 (1993).
• Zimmer, M., Junquera, J. & Ghosez, Ph. Ab initio study of metal/ferroelectric and insulator/ferroelectric heterostructures. AIP Conf. Proc. 626, 232-241 (2002).
• Neaton, J. B., Hsueh, C. L. & Rabe, K. M. Enhanced polarization in strained BaTiO3 from first principles. Mater. Res. Soc. Symp. Proc. 718, 311 (2002).
• Cohen, R. E. Origin of ferroelectricity in perovskite oxides. Nature 358, 136-138 (1992).
• Baldereschi, A., Baroni, S. & Resta, R. Band offsets in lattice-matched heterojunctions: a model and first-principles calculations for GaAs/AlAs. Phys. Rev. Lett. 61, 734-737 (1988).
• Fu, H. & Cohen, R. E. Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics. Nature 403, 281-283 (2000).
• King-Smith, R. D. & Vanderbilt, D. Theory of polarization of crystalline solids. Phys. Rev. B 47, 1651-1654 (1993).
• Bernardini, F. & Fiorentini, V. Electronic dielectric constants of insulators calculated by the polarization method. Phys. Rev. B 58, 15292-15295 (1998).
• Mehta, R. R., Silverman, B. D. & Jacobs, J. T. Depolarization fields in thin ferroelectric films. J. Appl. Phys. 44, 3379-3385 (1973).
• Chandra, P., Dawber, M., Littlewood, P. B. & Scott, J. F. Thickness-dependence of the coercive field in ferroelectrics. Preprint at 〈http://xxx.lanl.gov/abs/cond-mat/0206014〉 (2002).
• Nagaraj, B., Aggarwal, S. & Ramesh, R. Influence of contact electrodes on leakage characteristics in ferroelectric thin films. J. Appl. Phys. 90, 375-382 (2001).
• Hwang, C. S. et al. A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes. J. Appl. Phys. 83, 3703-3713 (1998).