Article (Scientific journals)
Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
Trappen, R.; Garcia Castro, Andrés Camilo; Tra, V. T. et al.
2018In Scientific Reports, 8 (1)
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Abstract :
[en] The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality. © 2018, The Author(s).
Disciplines :
Physics
Author, co-author :
Trappen, R.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States
Garcia Castro, Andrés Camilo ;  Université de Liège - ULiège
Tra, V. T.;  Institute of Physics, National Chiao Tung University, HsinChu, 30010, Taiwan
Huang, C.-Y.;  Department of Mechanical & Aerospace Engineering, West Virginia University, Morgantown, WV 26506, United States
Ibarra-Hernandez, W.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States, Facultad de Ingeniería-BUAP, Apartado Postal J-39, Puebla, Pue. 72570, Mexico
Fitch, J.;  Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States
Singh, Sobhit
Zhou, J.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States
Cabrera, G.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States
Chu, Y.-H.;  Institute of Physics, National Chiao Tung University, HsinChu, 30010, Taiwan
LeBeau, J. M.;  Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States
Romero, A. H.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States, Facultad de Ingeniería-BUAP, Apartado Postal J-39, Puebla, Pue. 72570, Mexico
Holcomb, M. B.;  Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, United States
More authors (3 more) Less
Language :
English
Title :
Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
Publication date :
2018
Journal title :
Scientific Reports
eISSN :
2045-2322
Publisher :
Nature Publishing Group, London, United Kingdom
Volume :
8
Issue :
1
Peer reviewed :
Peer Reviewed verified by ORBi
Funders :
NSF - National Science Foundation [US-VA] [US-VA]
DOE - United States. Department of Energy [US-OR] [US-OR]
Funding text :
1434897; DE-SC0016176; HEPC.dsr.12.29; National Science Foundation, NSF: ACI-1053575, DMR-1608656; U.S. Department of Energy, DOE: DE- SC0016176; Office of Science, SC
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