amorphous phase; GeTe; chalcogenides; fast transitions; ovonic threshold switching
Abstract :
[en] Abstract The sub-picosecond response of amorphous germanium telluride thin film to a femtosecond laser excitation is investigated using frequency-domain interferometry and ab initio molecular dynamics. The time-resolved measurement of the surface dynamics reveals a shrinkage of the film with a dielectric properties’ response faster than 300 fs. The systematic ab initio molecular dynamics simulations in non-equilibrium conditions allow the atomic configurations to be retrieved for ionic temperature from 300 to 1100 K and width of the electron distribution from 0.001 to 1.0 eV. Local order of the structures is characterized by in-depth analysis of the angle distribution, phonon modes, and pair distribution function, which evidence a transition toward a new amorphous electronic excited state close in bonding/structure to the liquid state. The results shed a new light on the optically highly excited states in chalcogenide materials involved in both important processes: phase-change materials in memory devices and ovonic threshold switching phenomenon induced by a static field.
Disciplines :
Physics
Author, co-author :
Martinez, Paloma
Blanchet, Valérie
Descamps, Dominique
Dory, Jean-Baptiste
Fourment, Claude
Papagiannouli, Irène
Petit, Stéphane
Raty, Jean-Yves ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Noé, Pierre
Gaudin, Jérôme
Language :
English
Title :
Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films
Publication date :
August 2021
Journal title :
Advanced Materials
ISSN :
0935-9648
eISSN :
1521-4095
Publisher :
Wiley-Blackwell, United States
Volume :
13
Issue :
n/a
Pages :
2102721
Peer reviewed :
Peer Reviewed verified by ORBi
Tags :
Tier-1 supercomputer CÉCI : Consortium des Équipements de Calcul Intensif
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